Atomic-level quantized reaction of HfOx memristor

In this study, we have observed dynamic switching behaviors in a memristive device. There are only a few atoms in the resistive switching reaction which enables the high-speed resistive switching characteristics, which was analyzed dynamically by real-time analyzing tools. From fundamental conductance considerations, the resistance of the conductive path in HfOx memristor is found to be due to barriers which are atomically incremented during the RESET process. Simultaneously, we have demonstrated the quantized switching phenomena at ultra-cryogenic temperature (4 K), which are attributed to the atomic-level reaction in metallic filament.

[1]  Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment , 2012 .

[2]  Shibing Long,et al.  Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application , 2008 .

[3]  Chun-Yen Chang,et al.  A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory , 2007, IEEE Electron Device Letters.

[4]  Shibing Long,et al.  Resistive switching characteristics of MnOx-based ReRAM , 2009 .

[5]  S. Sze,et al.  Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment , 2011 .

[6]  S. Sze,et al.  The Effect of Silicon Oxide Based RRAM with Tin Doping , 2012 .

[7]  Shih-Cheng Chen,et al.  Developments in nanocrystal memory , 2011 .

[8]  Qi Liu,et al.  Resistive switching memory effect of ZrO2 films with Zr+ implanted , 2008 .

[9]  Wei Wang,et al.  Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device , 2009 .

[10]  Kuan‐Chang Chang,et al.  Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment , 2011 .

[11]  Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device , 2012, IEEE Electron Device Letters.

[12]  Ya-Hsiang Tai,et al.  Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress , 2010 .

[13]  Kuan‐Chang Chang,et al.  A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid , 2009 .

[14]  S. Sze,et al.  Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment , 2012, IEEE Electron Device Letters.

[15]  Qi Liu,et al.  Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications , 2010, Nanotechnology.

[16]  M. Tsai,et al.  Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications , 2012, IEEE Electron Device Letters.

[17]  Qi Liu,et al.  Multilevel resistive switching with ionic and metallic filaments , 2009 .

[18]  Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization , 2007 .

[19]  S. Long,et al.  Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide , 2007 .

[20]  Po-Tsun Liu,et al.  A low temperature fabrication of HfO2 films with supercritical CO2 fluid treatment , 2008 .

[21]  Qi Liu,et al.  On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt , 2008 .

[22]  Shin-Ping Huang,et al.  Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors , 2010 .

[23]  Ting‐Chang Chang,et al.  Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor , 2011 .