Bottom-up photonic crystal lasers.

The directed growth of III-V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved via catalyst-free selective-area metal-organic chemical vapor deposition on masked GaAs substrates. The nanopillars implement a GaAs/InGaAs/GaAs axial double heterostructure for accurate, arbitrary placement of gain within the cavity and lateral InGaP shells to reduce surface recombination. The lasers operate single-mode at room temperature with low threshold peak power density of ∼625 W/cm2. Cavity resonance and lasing wavelength is lithographically defined by controlling pillar pitch and diameter to vary from 960 to 989 nm. We envision this bottom-up approach to pillar-based devices as a new platform for photonic systems integration.

[1]  S. Aloni,et al.  Complete composition tunability of InGaN nanowires using a combinatorial approach. , 2007, Nature materials.

[2]  Diana L. Huffaker,et al.  InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy , 2010 .

[3]  Shota Kita,et al.  Room temperature continuous wave operation and controlled spontaneous emission in ultrasmall photonic crystal nanolaser. , 2007, Optics express.

[4]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits , 1995 .

[5]  Yong-hee Lee,et al.  Vertical beaming of wavelength-scale photonic crystal resonators , 2006, physics/0604019.

[6]  Lars Samuelson,et al.  Epitaxial III-V nanowires on silicon , 2004 .

[7]  Shu-Wei Chang,et al.  Theory of plasmonic fabry-perot nanolasers. , 2010, Optics express.

[8]  Steven G. Johnson,et al.  Guided modes in photonic crystal slabs , 1999 .

[9]  Pallab Bhattacharya,et al.  Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon , 2011 .

[10]  C. Z. Ning,et al.  Giant modal gain, amplified surface plasmon-polariton propagation, and slowing down of energy velocity in a metal-semiconductor-metal structure , 2009 .

[11]  M. Nomura,et al.  Photonic crystal nanocavity laser with single quantum dot gain , 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

[12]  Kim,et al.  Two-dimensional photonic band-Gap defect mode laser , 1999, Science.

[13]  Connie Chang-Hasnain,et al.  Nanolasers Grown on Silicon , 2011, 1101.3305.

[14]  S. Combrie,et al.  Directive emission from high-Q photonic crystal cavities through band folding , 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

[15]  Takashi Fukui,et al.  Control of InAs nanowire growth directions on Si. , 2008, Nano letters.

[16]  Charles M. Lieber,et al.  Epitaxial core–shell and core–multishell nanowire heterostructures , 2002, Nature.

[17]  Masaya Notomi,et al.  High-quality-factor and small-mode-volume hexapole modes in photonic-crystal-slab nanocavities , 2003 .

[18]  Kenji Hiruma,et al.  Growth characteristics of GaAs nanowires obtained by selective area metal–organic vapour-phase epitaxy , 2008, Nanotechnology.

[19]  Shu-Wei Chang,et al.  Whispering gallery mode lasing from zinc oxide hexagonal nanodisks. , 2010, ACS nano.

[20]  Yoshinori Tanaka,et al.  Theoretical investigation of a two-dimensional photonic crystal slab with truncated cone air holes , 2003 .

[21]  Elias Vlieg,et al.  Twinning superlattices in indium phosphide nanowires , 2008, Nature.

[22]  T. Fukui,et al.  Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy , 2007 .

[23]  Fang Qian,et al.  Microstadium single-nanowire laser , 2007 .

[24]  Takashi Fukui,et al.  Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy , 2005 .

[25]  Seung‐Man Yang,et al.  Optofluidic integration of a photonic crystal nanolaser. , 2008, Optics express.

[26]  A. Scherer,et al.  Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars , 2011, 69th Device Research Conference.