论文信息 - Heterojunction double‐barrier diodes for logic applications

Heterojunction double‐barrier diodes for logic applications

The use of heterojunction double‐barrier diodes in logic circuits is examined. Switching time limitations are estimated based on circuit considerations and device architecture. Dispersion effects involving quantum mechanical resonant tunneling time delay are also included. These theoretical considerations indicate that picosecond or subpicosecond switching times might be achievable with appropriately designed AlxGa1−xAs/GaAs devices.

Darryl D. Coon | H. Liu | D. Coon | H. C. Liu

[1] Experimental study of the frequency limits of a resonant tunneling oscillator , 1986 .

[2] T. C. L. G. Sollner,et al. Quantum well oscillators , 1984 .

[3] Eugene P. Wigner,et al. Lower Limit for the Energy Derivative of the Scattering Phase Shift , 1955 .

[4] H. Liu,et al. Tunneling currents and two-body effects in quantum well and superlattice structures , 1985 .

[5] H. Liu,et al. Time dependent many body potential scattering and quantum well tunneling currents , 1985 .

[6] T. C. L. G. Sollner,et al. Microwave and Millimeter-Wave Resonant Tunneling Diodes , 1987, Topical Meeting on Picosecond Electronics and Optoelectronics.

[7] M. Reed,et al. Resonant tunneling through a HgTe/Hg1−xCdxTe double barrier, single quantum well heterostructure , 1986 .

[8] IIIA-4 resonant tunneling through quantum wells at 2.5 THz , 1983, IEEE Transactions on Electron Devices.

[9] Serge Luryi,et al. Frequency limit of double‐barrier resonant‐tunneling oscillators , 1985 .

[10] L. Esaki,et al. Resonant tunneling in semiconductor double barriers , 1974 .

[11] Hadis Morkoç,et al. Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature , 1985 .

[12] Darryl D. Coon,et al. Frequency limit of double barrier resonant tunneling oscillators , 1986 .