Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy?

[1]  S. Radelaar,et al.  Determination of the sticking coefficient of disilane on Si(001) using the first reflection high energy electron diffraction oscillation period , 1994 .

[2]  S. Radelaar,et al.  Study of growth kinetics in silicon gas source molecular beam epitaxy with disilane using RHEED intensity oscillations , 1993 .

[3]  W. K. Liu,et al.  A RHEED study of the surface reconstructions of Si(001) during gas source MBE using disilane , 1992 .

[4]  S. Gates,et al.  Hydrogen coverage during Si growth from SiH4 and Si2H6 , 1992 .

[5]  M. D'evelyn,et al.  π‐bonded dimers, preferential pairing, and first‐order desorption kinetics of hydrogen on Si(100)–(2×1) , 1992 .

[6]  C. Magee,et al.  Advances in remote plasma-enhanced chemical vapor deposition for low temperature In situ hydrogen plasma clean and Si and Si1-xGex epitaxy , 1992 .

[7]  T. Bramblett,et al.  Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6 , 1991 .

[8]  S. Gates,et al.  Dissociative chemisorption mechanisms of disilane on Si(100)-(2×1) and H-terminated Si(100) surfaces , 1991 .

[9]  Boland.  Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane. , 1991, Physical review. B, Condensed matter.

[10]  M. Konagai,et al.  Gas source molecular‐beam epitaxy of Si and SiGe using Si2H6 and GeH4 , 1991 .

[11]  S. Gates,et al.  Mechanisms of disilane decomposition on Si(111)-7 × 7 , 1990 .

[12]  B. Meyerson.  Low-temperature Si an Si: Ge expitaxy by ultrahigh-vacuum/chemical vapor deposition: process fundamentals , 1990 .

[13]  Y. Suda,et al.  Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1 , 1990 .

[14]  Lewis,et al.  New mechanism for hydrogen desorption from covalent surfaces: The monohydride phase on Si(100). , 1989, Physical review letters.

[15]  Avouris,et al.  Thermal and electron-beam-induced reaction of disilane on Si(100)-(2 x 1). , 1988, Physical review. B, Condensed matter.

[16]  T. Tatsumi,et al.  Selective growth condition in disilane gas source silicon molecular beam epitaxy , 1988 .

[17]  Chadi Dj,et al.  Stabilities of single-layer and bilayer steps on Si(001) surfaces. , 1987 .

[18]  James F. Gibbons,et al.  Limited reaction processing: Silicon epitaxy , 1985 .