Measurement of the Γ‐L separation in Ga0.47In0.53As by ultraviolet photoemission

We have studied the valence band of Ga0.47In0.53As by ultraviolet photoemission using photon energies of 11.7, 16.8, and 21.2 eV. The photo‐electron energy spectra show that the valence band of Ga0.47In0.53As has well‐defined structure similar to that of binary III‐V semiconductors. We have used these spectra to determine a conduction band Γ‐L separation of 0.55 eV at 300 K.