D.C. characteristics of silicon p-n junctions at avalanche breakdown including selfheating☆

Abstract The computation of the d.c. characteristics of a silicon p - n junction at breakdown is described in this paper. In the analysis, the effect of the dissipated electric power on the junction temperature is taken into account. The influences of the thermal resistance, the ambient temperature and the low-voltage reverse current on the d.c. characteristics at breakdown are shown. A formula describing the differential resistance of a junction at breakdown is derived. The temperature coefficients of voltage and current for the d.c. characteristics under consideration are derived as well. The coordinates of the points at which these coefficients change the sign are calculated and the influence of the thermal resistance, the ambient temperature and the low-voltage reverse current on the coordinates of these points is discussed.