A Vertical Power MOSFET With an Interdigitated Drift Region Using High- $k$ Insulator

A vertical power MOSFET with an interdigitated drift region using high-$k$ (Hk) insulator (Hk-MOSFET) is studied. Due to the fact that most of the electric displacement lines produced by the charges of the depleted drift region under reverse bias are through the Hk insulator, much heavier doping concentration can be used in the drift region when comparing with a conventional MOSFET with the same breakdown voltage. It is shown that the specific on-resistance of the Hk-MOSFET is comparable to that of the superjunction MOSFET (SJ-MOSFET) with the same breakdown voltage. The turn-on and turn-off times are found to be little longer than those of the conventional MOSFET and the SJ-MOSFET. The theoretical results of the electrical characteristics are in good agreement with the results from numerical simulations.

[1]  J.K.O. Sin,et al.  Optimization of the specific on-resistance of the COOLMOS/sup TM/ , 2001 .

[2]  W. Fulop,et al.  Calculation of avalanche breakdown voltages of silicon p-n junctions , 1967 .

[3]  Xingbi Chen,et al.  Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric , 2011, IEEE Electron Device Letters.

[4]  K. Board,et al.  Theory of a novel voltage-sustaining layer for power devices , 1998 .

[5]  K. Ng,et al.  The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.

[6]  Xin Yang,et al.  Progressive Development of Superjunction Power MOSFET Devices , 2008, IEEE Transactions on Electron Devices.

[7]  G. Dolny,et al.  High-voltage semiconductor devices: status and trends , 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..