Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET
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Gerard Ghibaudo | Thierry Baron | P. Periwal | Bassem Salem | Pascal Gentile | Franck Bassani | T. Baron | P. Gentile | B. Salem | F. Bassani | G. Rosaz | V. Brouzet | Guillaume Rosaz | G. Ghibaudo | P. Periwal | V. Brouzet
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