论文信息 - Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (111) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8mmx5mm, XRD GaN (0002) full-width at half-maximum (FWHM) of 661arcsec and surface roughness of 0.377nm. The device with a gate length of [email protected] and a gate width of [email protected] demonstrated maximum drain current density of 304mA/mm, transconductance of 124mS/mm and reverse gate leakage current of [email protected]/mm at the gate voltage of -10V.

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