EVOLUTION OF SUBSURFACE HYDROGEN FROM BORON-DOPED SI(100)

The reactions of atomic hydrogen with boron-doped Si(100) were studied using temperature programmed desorption (TPD). In addition to adsorbing at surface sites, hydrogen penetrates into boron-doped Si(100) samples and gets trapped by forming subsurface boron–hydrogen complexes. H2-TPD spectra, taken after exposure to atomic hydrogen, showed, in addition to the well known dihydride (680 K) and monohydride (795 K) desorption features, two peaks at 600 and 630 K due to decomposition of subsurface boron–hydrogen complexes. Increasing total hydrogen uptake with increasing dosing temperature (1.7 ML at 300 K, 4.2 ML at 500 K), suggests an activation barrier for subsurface hydrogen uptake. A quantitative correlation between boron concentration and subsurface hydrogen uptake is shown.

[1]  J. Ekerdt,et al.  Hydrogen desorption from ion-roughened Si(100) , 1997 .

[2]  J. Ekerdt,et al.  Kinetics of hydrogen desorption from germanium-covered Si(100) , 1996 .

[3]  J. Abelson,et al.  Effects of B doping on hydrogen desorption from Si(001) during gas‐source molecular‐beam epitaxy from Si2H6 and B2H6 , 1996 .

[4]  S. Banerjee,et al.  Cold‐wall ultrahigh vacuum chemical vapor deposition of doped and undoped Si and Si1−xGex epitaxial films using SiH4 and Si2H6 , 1996 .

[5]  N. Lee,et al.  B‐doped Si(001) grown by gas‐source molecular‐beam epitaxy from Si2H6 and B2H6:B incorporation and electrical properties , 1995 .

[6]  T. Bramblett,et al.  Si(001)2×1 gas‐source molecular‐beam epitaxy from Si2H6: Growth kinetics and boron doping , 1994 .

[7]  B. Equer,et al.  Surface passivation of boron doped a-Si:H , 1991 .

[8]  Cheng,et al.  H-induced surface restructuring on Si(100): Formation of higher hydrides. , 1991, Physical review. B, Condensed matter.

[9]  Santos,et al.  Trap-limited hydrogen diffusion in doped silicon. , 1990, Physical review. B, Condensed matter.

[10]  Lewis,et al.  New mechanism for hydrogen desorption from covalent surfaces: The monohydride phase on Si(100). , 1989, Physical review letters.

[11]  H. Wagner,et al.  Determination of the hydrogen diffusion coefficient in hydrogenated amorphous silicon from hydrogen effusion experiments , 1982 .

[12]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .