Ex situ Ohmic contacts to n-InGaAs
暂无分享,去创建一个
Mark J. W. Rodwell | Brian Thibeault | Arthur C. Gossard | Mark A. Wistey | Uttam Singisetti | Vibhor Jain | Evan Lobisser | M. Rodwell | A. Gossard | U. Singisetti | M. Wistey | G. Burek | A. Baraskar | B. Thibeault | E. Lobisser | V. Jain | Yong Ju Lee | Ashish K. Baraskar | Greg J. Burek
[1] C. McConville,et al. Atomic hydrogen cleaning of polar III–V semiconductor surfaces , 1998 .
[2] T. Jones,et al. Atomic hydrogen cleaning of GaAs(001): a scanning tunnelling microscopy study [rapid communication] , 2004 .
[3] E. Vogel,et al. Indium stability on InGaAs during atomic H surface cleaning , 2008 .
[4] Mark J. W. Rodwell,et al. Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs , 2009 .
[5] H. Beneking,et al. Measurement of low resistive ohmic contacts on semiconductors , 1986, IEEE Transactions on Electron Devices.
[6] I. Ochiai,et al. Atomic hydrogen cleaning of GaAs and InP surfaces studied by photoemission spectroscopy , 1994 .
[7] T. Sugaya,et al. Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation , 1991 .
[8] T. Jones,et al. Surface reconstructions of InGaAs alloys , 2006 .
[9] Horst H. Berger,et al. Models for contacts to planar devices , 1972 .
[10] M. Rodwell,et al. $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth , 2009, IEEE Electron Device Letters.
[11] Mark J. W. Rodwell,et al. InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies , 2008, Proc. IEEE.
[12] H. Künzel,et al. A controllable mechanism of forming extremely low‐resistance nonalloyed ohmic contacts to group III‐V compound semiconductors , 1993 .