Characteristics of the high-speed SI thyristor and its application to the 60-kHz 100-kW high-efficiency inverter

The authors describe fabrication results for the 1200 V, 300 A class of the single-buried-gate, n-buffer free and anode-emitter-shorted, normally-on-type, medium-power, very low-loss, high-speed SI thyristor. This class of thyristors has a relatively thinner n-type high resistivity that is larger than that of the 2500 V 300 A class of SI thyristors. The characteristics of the fabricated device were investigated to obtain data for the improvement of the turn-off switching performance of the buried-gate SI thyristor for use as a power switch. >

[1]  S. Sugiyama,et al.  Normally-off type high speed SI-Thyristor , 1982, 1982 International Electron Devices Meeting.

[2]  K. Muraoka,et al.  A low-loss high-speed switching device: The 2500-V 300-A static induction thyristor , 1985, IEEE Transactions on Electron Devices.

[3]  K. Muraoka,et al.  Low-loss high speed switching device, 2500V–300A Static Induction Thyristor , 1985, 1985 IEEE Power Electronics Specialists Conference.

[4]  J. Nishizawa,et al.  Effects of gate structure on static induction thyristor , 1980, 1980 International Electron Devices Meeting.

[5]  T. Nagano,et al.  High power static induction thyristor , 1979, 1979 International Electron Devices Meeting.

[6]  Y. Yukimoto,et al.  High speed high voltage static induction thyristor , 1977, 1977 International Electron Devices Meeting.