Photovoltaic properties of NiPc/p-Si (organic/inorganic) heterojunctions

Abstract Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of NiPc thin films deposited on p-Si as heterojunction have been investigated. For I–V measurements, the conventional rectifying properties were shown with rectification ratio of 1750. At low voltages, current in the forward direction was found to obey the diode equation and the conduction was controlled by thermionic emission mechanism. For relatively higher voltages, conduction was dominated by a space-charge-limited conduction mechanism with single trap level of 0.36 eV. On the other hand, the carrier generation-recombination process limits the reverse current. Also, various electrical parameters were determined from the I–V and C–V analysis. The junction exhibits photovoltaic characteristics with open-circuit voltage (Voc) of 0.32 V, a short-circuit current (Isc) of 186 μA and a power conversion efficiency (η) of 1.11%. These parameters have been estimated at room temperature and under illumination of 6 mWcm−2 white light.

[1]  L. Lüer,et al.  Soluble alkyl‐ and alkoxy‐substituted titaniumoxo phthalocyanines: Synthesis and photoconductivity , 1997 .

[2]  R. D. Gould,et al.  Effects of annealing on the trap distribution of cobalt phthalocyanine thin films , 1991 .

[3]  David L. King,et al.  Solar Cell Efficiency Tables (Version 9) , 1997 .

[4]  S. Riad,et al.  Dark and photoelectric conversion properties of p-MgPc/n-Si (Organic/Inorganic) heterojunction cells. , 2000 .

[5]  R. M. Abdel-Latif,et al.  Transport properties in nickel phthalocyanine thin films using gold electrodes , 1995 .

[6]  Mahmoud Z. Iskandarani,et al.  Effect of electrode geometry on gas sensitivity of lead phthalocyanine thin films , 1992 .

[7]  High rectification in metal-phthalocyanine based single layer devices , 2001 .

[8]  A. A. Aly,et al.  Electric and Photoelectric Investigations of β-Nickel Phthalocyanine Thin Films , 1983, April 16.

[9]  A. T. Davidson.  The effect of the metal atom on the absorption spectra of phthalocyanine films , 1982 .

[10]  Peter Gregory,et al.  High-Technology Applications of Organic Colorants , 1991 .

[11]  M. Lampert.  Volume-controlled current injection in insulators , 1964 .

[12]  E. H. Rhoderick,et al.  Metal–Semiconductor Contacts , 1979 .

[13]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[14]  Dieter Meissner,et al.  Organic Solar Cells , 1991 .

[15]  Characterization of VLSI metal conductors using a first-order Joule heating model , 1995 .

[16]  Amal K. Ghosh,et al.  Photovoltaic and rectification properties of Al/Mg phthalocyanine/Ag Schottky‐barrier cells , 1974 .

[17]  Shui-Tong Lee,et al.  INTERFACIAL ELECTRONIC STRUCTURES IN AN ORGANIC LIGHT-EMITTING DIODE , 1999 .

[18]  Hideharu Matsuura.  A novel method for determining the gap‐state profile and its application to amorphous Si1−xGex: H films , 1988 .

[19]  F. Lalande,et al.  Electrical properties of a-GaAs/c-Si (p) heterojunctions , 1995 .

[20]  Yang Yang,et al.  Efficient photovoltaic energy conversion in pentacene-based heterojunctions , 2000 .

[21]  Adelmo Ortiz-Conde,et al.  Procedure for determining diode parameters at very low forward voltage , 1999 .

[22]  M. El-Nahass,et al.  OPTICAL CHARACTERISATION OF THERMALLY EVAPORATED NICKEL PHTHALOCYANINE THIN FILMS , 2004 .

[23]  D. Zahn,et al.  Response of lead phthalocyanine to high NO2 concentration , 1995 .

[24]  C. Tang.  Two‐layer organic photovoltaic cell , 1986 .

[25]  M. Roy,et al.  Influence of iodine on the electrical and photoelectrical properties of zinc phthalocyanine thin film devices , 1996 .

[26]  R. D. Gould,et al.  Dependence of the mobility and trap concentration in evaporated copper phthalocyanine thin films on background pressure and evaporation rate , 1986 .

[27]  R. P. Linstead,et al.  212. Phthalocyanines. Part I. A new type of synthetic colouring matters , 1934 .

[28]  D. Haarer,et al.  Present limits of data storage using dye molecules in solid matrices , 1995 .