Channeling studies of defects

[1]  L. M. Howe,et al.  A channelling study of vacancy-solute complexes in Al-0.04 at.% Sn , 1981 .

[2]  L. M. Howe,et al.  Trapping of irradiation-induced defects by tin atoms in an Al-0.03 at.% Sn crystal , 1980 .

[3]  H.-D. Cabstanjen.  Interstitial positions and vibrational amplitudes of hydrogen in metals investigated by fast ion channeling , 1980 .

[4]  L. M. Howe,et al.  Channeling studies of mixed dumbbells in metals , 1980 .

[5]  S. T. Picraux,et al.  Depth profile studies of extended defects induced by ion implantation in Si and Al , 1980 .

[6]  A. Crocker,et al.  The structure of small vacancy clusters in face-centred-cubic metals , 1980 .

[7]  E. Ligeon,et al.  Lattice location and trapping of hydrogen implanted in FCC metals , 1979 .

[8]  L. M. Howe,et al.  Channeling measurements of the trapping efficiencies of solute atoms for self-interstitial atoms in metals , 1979 .

[9]  R. Petty,et al.  Experimental study of flux peaking for channeled ions usingO18in Ti , 1978 .

[10]  W. Schilling.  Self-interstitial atoms in metals , 1978 .

[11]  L. M. Howe,et al.  A study of interstitial trapping configurations in fcc metals by ion channeling , 1978 .

[12]  L. M. Howe,et al.  A channeling investigation of the interaction between solute atoms and irradiation-produceddefects in magnesium , 1978 .

[13]  L. M. Howe,et al.  The use of nuclear reactions and ion channeling to study trapping of Cu self-interstitial atoms by Be solute atoms in a Cu – 0.25 at.% Be crystal , 1977 .

[14]  L. M. Howe,et al.  Backscattering measurements of the trapping of Zr Self-interstitial atoms by Au Atoms in irradiated Zr-Au Crystals , 1977 .

[15]  C. Hohenemser,et al.  Damage studies on the system $$^{111} \mathop {In}\limits^ \to \underline {Ni}$$ , 1977 .

[16]  E. Ligeon,et al.  A study of hydrogen implanted in aluminium , 1976 .

[17]  T. Sigmon,et al.  Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon , 1976 .

[18]  L. M. Howe,et al.  The combined effects of lattice vibrations and irradiation-produced defects on dechanneling , 1976 .

[19]  L. M. Howe,et al.  The trapping configuration of Al interstitial atoms at Zn solute atoms in Al–0.1 at% Zn crystals† , 1975 .

[20]  F. Maury,et al.  The Location of Displaced Impurity Atoms in Irradiated Aluminum Crystals by Backscattering , 1975 .

[21]  Y. Quéré.  Dechanneling of fast particles by lattice defects , 1974 .

[22]  Donald S. Gemmell,et al.  Channeling and related effects in the motion of charged particles through crystals , 1974 .

[23]  James W. Mayer,et al.  Ion implantation in semiconductors , 1973 .

[24]  N. Itoh,et al.  Effect of atomic displacement on dechanneling , 1973 .

[25]  D. Vliet.  On the spatial distribution of channelled ions , 1971 .

[26]  J. Davies,et al.  The use of channeling-effect techniques to locate interstitial foreign atoms in silicon , 1971 .

[27]  E. Bøgh.  DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING. , 1968 .

[28]  A. Damask,et al.  Point Defects in Metals , 1964 .

[29]  A. Damask,et al.  Calculation of Migration and Binding Energies of Mono-, Di-, and Trivacancies in Copper with the Use of a Morse Function , 1959 .