Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts

Two planarization techniques for high aspect ratio three dimensional pillar structured p-i-n diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by reactive ion etch-back to expose the tops of the pillar structure. The second technique also utilizes photoresist but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of three dimensional high aspect ratio structures.

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