论文信息 - Reliability evaluation of direct chip attached silicon carbide pressure transducers

Reliability evaluation of direct chip attached silicon carbide pressure transducers

An accelerated stress test (AST) protocol has been developed and used to evaluate the reliability of 6H-silicon carbide (SiC) pressure transducers for operation up to 400 /spl deg/C for 100 hours. After several cyclic excursions to 400 /spl deg/C, the maximum drift of the zero pressure offset voltage at 25 /spl deg/C was 1.9 mV, while the maximum drift at 400 /spl deg/C was 2.0 mV. The full-scale sensitivity to pressure before and after the AST was 36.6 /spl mu/V/V/psi at 25 /spl deg/C and 20.5 /spl mu/V/V/psi at 400 /spl deg/C, with a maximum drift of /spl plusmn/1 /spl mu/V/V/psi. No systematic degradation of the zero pressure offset was observed.

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