Highly efficient 2.2-GHz Si power MOSFETs for cellular base station applications

A 2.2-GHz Si power MOSFET with high output power and high drain efficiency has been developed for cellular base station applications. This device has an LDMOS structure with a sub-micron gate. Internal matched circuits for input and output impedance matching consist of MOS capacitor chips and Al bonding wires. In a push-pull configuration and 2.2-GHz operation, the MOSFET has output power of 120 W, power gain of 10.8 dB, and drain efficiency of 45%.

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