Design and characterization of a multi-RC-triggered MOSFET-based power clamp for on-chip ESD protection

We present a novel multi-RC-triggered MOSFET-based power clamp with up to 70% trigger circuit area reduction and improved transient HBM, MM, and CDM ESD clamping performance. A three-stage RC-trigger circuit design gives a 300 ns self-shutdown time during power-up for mistrigger leakage current control and an improved mistrigger immunity down to 1 mus power-up rise time. TLP and HBM hardware characterization data from a 90 nm CMOS technology show >5A failure current and >3 kV HBM robustness for a designed MOSFET width of 4000 mum.

[1]  J.C. Smith,et al.  A low leakage low cost-PMOS based power supply clamp with active feedback for ESD protection in 65nm CMOS technologies , 2005, 2005 Electrical Overstress/Electrostatic Discharge Symposium.

[2]  M. Stockinger,et al.  Boosted and distributed rail clamp networks for ESD protection in advanced CMOS technologies , 2003, 2003 Electrical Overstress/Electrostatic Discharge Symposium.

[3]  R. Gauthier,et al.  A compact, timed-shutoff, MOSFET-based power clamp for on-chip ESD protection , 2004, 2004 Electrical Overstress/Electrostatic Discharge Symposium.

[4]  Jeremy C. Smith,et al.  A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies , 2003, 2003 Electrical Overstress/Electrostatic Discharge Symposium.

[5]  E. Worley,et al.  Sub-micron chip ESD protection schemes which avoid avalanching junctions , 1995, Electrical Overstress/Electrostatic Discharge Symposium Proceedings.

[6]  Timothy J. Maloney,et al.  Stacked PMOS clamps for high voltage power supply protection , 1999, Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 1999 (IEEE Cat. No.99TH8396).

[7]  Timothy J. Maloney,et al.  New considerations for MOSFET power clamps , 2002, 2002 Electrical Overstress/Electrostatic Discharge Symposium.

[8]  Wei Jin,et al.  High performance 50 nm CMOS devices for microprocessor and embedded processor core applications , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).