High Performance RF FETs Using High-k Dielectrics on Wafer-Scale Quasi-Free-Standing Epitaxial Graphene

We explore the effect of processing on graphene/metal ohmic contact resistance, the integration of high-κ dielectric seeds and overlayers on carrier transport in epitaxial graphene, and directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. We present a robust method for forming high quality ohmic contacts to graphene, which improves the contact resistance by nearly 6000x compared to untreated metal/graphene interfaces. Optimal specific contact resistance for treated Ti/Au contacts is found to average -7 Ohm-cm2. Additionally, we introduce a novel seeding technique for depositing dielectrics by ALD that utilizes direct deposition of high-κ seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Finally, we demonstrate that buffer elimination at the graphene/SiC(0001) results in excellent high frequency performance of graphene transistors with fT > 130 GHz at 75 nm gate lengths.

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