论文信息 - Gas source molecular beam epitaxy of GaInAs and GaInAsP strained layer quantum well lasers emitting at 1.5 mu m - 字舞流文

Gas source molecular beam epitaxy of GaInAs and GaInAsP strained layer quantum well lasers emitting at 1.5 mu m

R. Simes | F. Pommereau | C. Starck | F. Gaborit | L. Goldstein | J. Emery | J. Barrau | P. Pagnod-Rossiaux | M. Matabon