Spice modeling of 4H-SiC MOSFET based on the advanced mobility model

SPICE modeling of silicon carbide (SiC) MOSFET based on the advanced mobility model has been carried out. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expressions, which can exactly reflect the effect of SiC/SiO2 interface traps on the electrical characteristics of 4H-SiC MOSFET. Key parameters in this advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The transfer characteristics of the developed 4H-SiC MOSFET model have been validated with the production Datasheet, the switching characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO2 interface-trap densities on the switching characteristics of 4H-SiC MOSFET has been quantitatively discussed, reasonable gate driving voltage of 4HSiC MOSFET with different interface-trap densities has been revealed.

[1]  L. Tolbert,et al.  A high temperature silicon carbide MOSFET power module with integrated silicon-on-insulator based gate drive , 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

[2]  N. Goldsman,et al.  Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors , 2002 .

[3]  J. R. Williams,et al.  Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs , 2011, IEEE Transactions on Electron Devices.

[4]  Jun Wang,et al.  Characterization, Modeling, and Application of 10-kV SiC MOSFET , 2008, IEEE Transactions on Electron Devices.

[5]  Hans Jurgen Mattausch,et al.  Power-Loss Prediction of High-Voltage SiC-mosfet Circuits With Compact Model Including Carrier-Trap Influences , 2016, IEEE Transactions on Power Electronics.

[6]  J. Millan,et al.  Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors , 2006 .

[7]  Johann W. Kolar,et al.  SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors , 2011, IEEE Transactions on Industrial Electronics.

[8]  B. Hull,et al.  High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications , 2016, IEEE Transactions on Power Electronics.

[9]  K. Sun,et al.  Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range , 2014, IEEE Transactions on Power Electronics.

[10]  N. Goldsman,et al.  A Physical Model of High Temperature 4H-SiC MOSFETs , 2008, IEEE Transactions on Electron Devices.

[11]  E. Arnold,et al.  Effect of interface states on electron transport in 4H-SiC inversion layers , 2001 .

[12]  D. Boroyevich,et al.  A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications , 2014, IEEE Transactions on Power Electronics.

[13]  Jae Seung Lee,et al.  A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices , 2014, IEEE Transactions on Power Electronics.

[14]  A. Radun,et al.  A 1-MHz hard-switched silicon carbide DC–DC converter , 2003, IEEE Transactions on Power Electronics.

[15]  H. Mantooth,et al.  Modeling of Wide Bandgap Power Semiconductor Devices—Part I , 2015, IEEE Transactions on Electron Devices.

[16]  Axel Mertens,et al.  Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices , 2014, IEEE Transactions on Power Electronics.

[17]  Jun Wang,et al.  10 kV SiC MOSFET Based Boost Converter , 2008, 2008 IEEE Industry Applications Society Annual Meeting.

[18]  Jun-Ichi Itoh,et al.  A Maximum Power Density Design Method for Nine Switches Matrix Converter Using SiC-MOSFET , 2016, IEEE Transactions on Power Electronics.

[19]  E. Arnold.  Charge-sheet model for silicon carbide inversion layers , 1999 .

[20]  Xinke Wu,et al.  An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature , 2014, IEEE Transactions on Power Electronics.

[21]  A. Mantooth,et al.  Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region , 2012, IEEE Transactions on Industry Applications.