Simple analysis method for determining internal quantum efficiency and relative recombination ratios in light emitting diodes

We propose a facile analysis method for determining internal quantum efficiency (IQE) and relative carrier recombination ratios in light emitting diodes (LEDs). Using this method, IQE and different contributions of radiative and nonradiative recombination processes at arbitrary excitation power can be unambiguously determined without any knowledge of A, B, and C coefficients of the rate equation. We applied our analysis method to two LED samples grown on different substrates with distinct material quality and found good agreement with experimental results such as ω-rocking curve obtained by high resolution x-ray diffraction and decay lifetime measured by time-resolved photoluminescence.

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