A 5732-element linear CCD image sensor

This paper describes a high-density CCD image sensor with 5732 elements in 1.2-in-long silicon chip with a 5-µm effective sampling pitch. The device architecture includes a bilinear sensor array of odd and even staggered apertures, an integrated delay stage to multiplex the odd and even pixel data, and a unique self-aligned aperture structure. This design is fabricated in a standard two-layer polysilicon-gate BCCD process with relaxed 3.0-µm design rules, Typical device characteristics achieved are a charge-transfer efficiency of 0.99995, a sensor nonuniformity of ±4 percent peak to peak, an MTF of 0.625 at 50 c/mm, and an operating speed of 24 MHz.