Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
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P. T. Lai | Charles Surya | W. K. Fong | C. Surya | W. Fong | W. Wang | P. Lai | W. Wang | C. H. Chan | Chung‐hong Chan
[1] Alexios Birbas,et al. Flicker noise in submicron metal oxide semiconductor field effect transistors with nitrided gate oxide , 1995 .
[2] C. Surya,et al. Studies of flicker noise in In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes , 1992 .
[3] Charles Surya,et al. A thermal activation model for 1/ƒy noise in Si-MOSFETs , 1988 .
[4] M. Weissman. 1/f noise and other slow, nonexponential kinetics in condensed matter. , 1988 .
[5] T. Yeh,et al. Impurity Gettering of Silicon Damage Generated by Ion Implantation Through SiO2 Layers , 1982 .
[6] P. M. Horn,et al. Low-frequency fluctuations in solids: 1/f noise , 1981 .
[7] J. G. Pasko,et al. High‐speed Pb1−xSnx Te photodiodes , 1972 .