Charge-pumping characterization of SiO/sub 2//Si interface in virgin and irradiated power VDMOSFETs

The applicability of charge-pumping technique to characterize the oxide/silicon interface in standard power Vertical Double-diffused (VD)MOS transistors is studied. Qualitative analysis of the charge-pumping threshold and flat-band voltage distributions in the VDMOS structure, supported with rigorous transient numerical modeling of the charge-pumping effect, shows that the measurements can be carried out in the subthreshold region. This conclusion is confirmed by various experimental results. The characteristics, i.e. charge-pumping current versus gate top level, is studied in detail. The changes in the characteristics after /spl gamma/-ray irradiation are analyzed. A charge-pumping-based method for separate extraction of interface state density and density of charge trapped in the oxide after irradiation of VDMOSFETs is proposed. The validity and limitations of the method are studied by experiments and modeling.

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