Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers
暂无分享,去创建一个
D. Bimberg | P. Borri | F. Heinrichsdorff | J. Hvam | D. Bimberg | M.-H. Mao | F. Heinrichsdorff | P. Borri | W. Langbein | W. Langbein | M.-H. Mao | J.M. Hvam | M. Mao | D. Bimberg | Ming-Hua Mao
[1] J. M. Rorison,et al. Quantum Dot Heterostructures , 2000 .
[2] Dieter Bimberg,et al. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition , 1997 .
[3] Weidong Yang,et al. Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots , 1997 .
[4] James L. Merz,et al. Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy , 1999 .
[5] Jesper Mørk,et al. Dephasing in InAs/GaAs quantum dots , 1999 .
[6] G. Bastard,et al. Phonon-assisted capture and intradot Auger relaxation in quantum dots , 1999 .
[7] Ali M. Darwish,et al. Subpicosecond gain and index nonlinearities in InGaAsP diode lasers , 1994 .
[8] Mitsuru Sugawara,et al. Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics , 1999 .
[9] J. Laskar,et al. Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain , 1998, IEEE Photonics Technology Letters.
[10] Jasprit Singh,et al. Rapid carrier relaxation in In 0.4 Ga 0.6 A s / G a A s quantum dots characterized by differential transmission spectroscopy , 1998 .
[11] Jesper Mørk,et al. Heterodyne pump-probe and four-wave mixing in semiconductor optical amplifiers using balanced lock-in detection , 1999 .
[12] Simon Fafard,et al. Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots , 1999 .