Short wavelength (λc = 2.5 μm) 32 x 32 HgCdTe focal plane arrays have been fabricated for use in an Airborne Imaging Spectrometer (AIS) developed by the Jet Propulsion Labora-tory for NASA. An Imaging Spectrometer provides simultaneous imaging of several spectral bands for applications in the sensing and monitoring of earth resources. The detector material is HgCdTe grown on CdTe substrates using liquid phase epitaxy. Planar processing is used to make photovoltaic detectors on 68 um centers. The detector array is mated to a silicon charge coupled device multiplexer to make hybrid focal plane arrays. Results show high performance detectors with a mean RoA = 9.6 x 107 Ω --cm2 and IleakAge (-100 mV) = 0.037 pA at 120K and near zero background. The yield and uniformity are high. The ratio of the standard deviation of the dc responsivity to the mean is 3% for 98.5% of the pixels. The D1.0 = 1.3 x 1012 cm - âœ"fiz/W at a background of 1013 ph/cm2-s and 120K which is close to the background limited (BLIP) D* of 1.9 x 1012 cm- âœ"Hz/W.
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