论文信息 - Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy

Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy

We have investigated the vertical correlation properties of SiGe islands in a series of Si/SiGe multilayers using grazing incidence x-ray diffraction. The degree of island correlation is found to strongly depend on the thickness of the Si spacer layer separating subsequent SiGe layers. A comparison with results obtained from transmission electron microscopy demonstrates the feasibility of the x-ray diffraction method for the investigation of sample series, and an improved statistical accuracy of the obtained parameters: with x-ray diffraction, the statistical average of typically 106–107 island columns is obtained, compared to only few in the case of transmission electron microscopy.

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