论文信息 - Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C - 字舞流文

Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C

Huang-Chung Cheng | T. Yew | Jing‐Cheng Lin | Chiapyng Lee | Wen-Horng Lee | Huang-Chung Cheng