The design, the fabrication and the characterization of a BMFET (Bipolar Mode FET) with a maximum voltage of 1600 V and maximum current of 5 A (at hFS = 2.5) are reported. With the help of theoretical models, the effects of physical and geometrical parameters on the performance of the device are investigated and the rules to be used in the design are defined. The switching characteristics of the fabricated devices show that the BMFET gives full Reverse Safe Operating Area and fall-time down to 30 ns on inductive load.