论文信息 - Analysis of trap and recovery characteristics based on low-frequency noise for E-mode GaN HEMTs with p-GaN gate under repetitive short-circuit stress - 字舞流文

Analysis of trap and recovery characteristics based on low-frequency noise for E-mode GaN HEMTs with p-GaN gate under repetitive short-circuit stress

Y. En | X. B. Xu | B. Li | Y. Chen | Z. H. Wu | Z. He | Y. En | Y. Huang | Z. He | Z. H. Wu