Ultra-high speed semiconductor lasers

Recent progress on semiconductor lasers having a very high direct modulation bandwidth of beyond 10 GHz will be described. Issues related to application of these lasers in actual systems will be addressed. Possibilities of further extending the bandwidth of semiconductor lasers will be examined.

[1]  W. Lamb.  Theory of an optical maser , 1964 .

[2]  W. Lamb,et al.  Propagation of light pulses in a laser amplifier , 1969 .

[3]  T. L. Paoli,et al.  Direct modulation of semiconductor lasers , 1970 .

[4]  S. Gonda,et al.  Degradation and intensity fluctuations in CW AlGaAs double-heterostructure junction lasers , 1975 .

[5]  Frank Stern,et al.  Calculated spectral dependence of gain in excited GaAs , 1976 .

[6]  R. Lang,et al.  Suppression of the relaxation oscillation in the modulated output of semiconductor lasers , 1976 .

[7]  F. Mengel,et al.  Dynamics of longitudinal and transverse modes along the junction plane in GaAlAs stripe lasers , 1977 .

[8]  Yasuharu Suematsu,et al.  Suppression of relaxation oscillation in light output of injection lasers by electrical resonance circuit , 1977 .

[9]  Hisao Saito,et al.  GaAs–AlGaAs DH Lasers with Buried Facet , 1978 .

[10]  A. Yariv,et al.  GaAs‐GaAlAs injection lasers on semi‐insulating substrates using laterally diffused junctions , 1978 .

[11]  Michiharu Nakamura,et al.  Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasers , 1978 .

[12]  K Furuya,et al.  Reduction of resonancelike peak in direct modulation due to carrier diffusion in injection laser. , 1978, Applied optics.

[13]  M. Maeda,et al.  Buried-Heterostructure Laser Packaging for Wideband Optical Transmission Systems , 1978, IEEE Trans. Commun..

[14]  K. Petermann,et al.  Theoretical analysis of spectral modulation behaviour of semiconductor injection lasers , 1978 .

[15]  Naoki Chinone,et al.  Transverse mode stabilized Al x Ga 1-x As injection lasers with channeled-substrate-planar structure , 1978 .

[16]  Naoki Chinone,et al.  Longitudinal‐mode behaviors of mode‐stabilized AlxGa1−xAs injection lasers , 1978 .

[17]  Kristian Elmholdt Stubkjr.  Nonlinearity of d.h. GaAlAs lasers , 1979 .

[18]  A. Yariv,et al.  Nonlinear distortions in the current modulation of non-self-pulsing and weakly self-pulsing GaAs/GaAlAs injection lasers , 1980 .

[19]  D. Scifres,et al.  High‐speed laser modulation with integrated optical injection , 1980 .

[20]  R. Plumb,et al.  Channelled substrate narrow stripe GaAs/(GaAl)As lasers with quarter-wavelength facet coatings , 1980 .

[21]  A. Yariv,et al.  Buried heterostructure AlGaAs lasers on semi-insulating substrates , 1981 .

[22]  Minoru Yamada,et al.  Analysis of gain suppression in undoped injection lasers , 1981 .

[23]  A. Yariv,et al.  The effect of lateral carrier diffusion on the modulation response of a semiconductor laser , 1981 .

[24]  Amnon Yariv,et al.  The intrinsic electrical equivalent circuit of a laser diode , 1981 .

[25]  J. Connolly,et al.  The effect of facet mirror reflectivity on the spectrum of single-mode CW constricted double-heterojunction diode lasers , 1981 .

[26]  T. Paoli.  Magnitude of the intrinsic resonant frequency in a semiconductor laser , 1981 .

[27]  A. Yariv,et al.  A proposed new method for damping relaxation oscillations in laser diodes , 1982, IEEE Electron Device Letters.

[28]  L. Figueroa,et al.  High-frequency characteristics of GaAlAs injection lasers , 1982 .

[29]  A. Yariv,et al.  A theory of longitudinal modes in semiconductor lasers , 1982 .

[30]  N. Bar-chaim,et al.  GaAs integrated optoelectronics , 1982, IEEE Transactions on Electron Devices.

[31]  M. Takusagawa,et al.  Catastrophic degradation level of visible and infrared GaAlAs lasers , 1982 .

[32]  Amnon Yariv,et al.  Large optical cavity AlGaAs buried heterostructure window lasers , 1982 .

[33]  A. Yariv,et al.  Effect of superluminescence on the modulation response of semiconductor lasers , 1982 .

[34]  Kam Y. Lau,et al.  Very high frequency GaAlAs laser field‐effect transistor monolithic integrated circuit , 1982 .

[35]  D. J. Pope,et al.  Microwave Circuit Models of Semiconductor Injection Lasers , 1982 .

[36]  N. A. Olsson,et al.  High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers , 1983 .

[37]  A. Yariv,et al.  Semiclassical theory of noise in semiconductor lasers - Part II , 1983, IEEE Journal of Quantum Electronics.

[38]  High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate , 1983 .

[39]  A. Yariv,et al.  Superluminescent damping of relaxation resonance in the modulation response of GaAs lasers , 1983 .

[40]  R. Tucker,et al.  High-speed switching transients in directly modulated InGaAsP lasers , 1984 .

[41]  Uziel Koren,et al.  High‐speed analog and digital modulation of 1.51‐μm wavelength, three‐channel buried crescent InGaAsP lasers , 1984 .

[42]  Kam Y. Lau,et al.  Longitudinal mode spectrum of semiconductor lasers under high-speed modulation , 1984 .

[43]  Yasuhiko Arakawa,et al.  Quantum noise and dynamics in quantum well and quantum wire lasers , 1984 .

[44]  I. Kaminow.  High-speed modulation of semiconductor lasers , 1984 .

[45]  K. Vahala,et al.  Detuned loading in coupled cavity semiconductor lasers—effect on quantum noise and dynamics , 1984 .

[46]  Kam Y. Lau,et al.  11‐GHz direct modulation bandwidth GaAlAs window laser on semi‐insulating substrate operating at room temperature , 1984 .

[47]  A. Yariv,et al.  Intermodulation distortion in a directly modulated semiconductor injection laser , 1984 .