论文信息 - Combined effects of graded and setback layers on the HBT current-voltage characteristics - 字舞流文

Combined effects of graded and setback layers on the HBT current-voltage characteristics

C. Huang | J. Liou | C. S. Ho | L. Liou | D. L. Chen

[1] Juin J. Liou,et al. An analytical model for current transport in AlGaAs/GaAs abrupt HBTs with a setback layer , 1993 .

[2] S. Luryi,et al. On the thermionic-diffusion theory of minority transport in heterostructure bipolar transistors , 1993 .

[3] James S. Harris,et al. Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors , 1992 .

[4] C. Parikh,et al. Space-charge region recombination in heterojunction bipolar transistors , 1992 .

[5] Y. Su,et al. A study of current transport in p-N heterojunctions , 1992 .

[6] C. Huang,et al. Using constant base current as a boundary condition for one-dimensional AlGaAs/GaAs heterojunction bipolar transistor simulation , 1990 .

[7] B. R. Ryum,et al. A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs) , 1990 .

[8] S. Tiwari,et al. Analysis of the operation of GaAlAs/GaAs HBTs , 1989 .

[9] M. Lundstrom,et al. Numerical study of emitter-base junction design for AlGaAs/GaAs heterojunction bipolar transistors , 1988 .

[10] W. I. Wang. On the band offsets of AlGaAs/GaAs and beyond , 1986 .

[11] M. Lundstrom. Boundary conditions for pn heterojunctions , 1984 .

[12] A. H. Marshak,et al. Theory of abrupt heterojunctions in equilibrium , 1981 .

[13] G. Rey,et al. Electrical behavior of an NPN GaAlAs/GaAs heterojunction transistor , 1979 .