Design of wide-IF-band CMOS mixer with LO multiplier

This paper reports the development of K-band wide-IF-band CMOS mixer with LO multiplier suitable for wideband applications. To achieve such broad bandwidth, several design techniques - such as current-reuse differential-pair with LC resonance circuit, and simultaneous in-band gain peaking and off-band gain tailoring - have been analyzed and employed. The on-wafer measurement of this 17.4-26.1GHz TSMC 0.18μm CMOS mixer with LO doubler shows a -1dB conversion gain, 11dB noise figure, -6dBm input-referred 1dB compression point, 40dB RF-IF isolation, and 45dB LO-IF isolation at 8.7GHz. The chip size is 1400 × 1300μm2.

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