论文信息 - Dose rate and annealing effects on total dose response of MOS and bipolar circuits

Dose rate and annealing effects on total dose response of MOS and bipolar circuits

Different part types of major technology families were irradiated in order to study dose rate and post irradiation annealing effects. Results confirm that degradation of MOS technologies at low dose rates can be predicted from high dose rate and annealing measurements, while this is not possible for bipolar linear ICs. The ESA/SCC22900 test method is discussed.

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