Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems

A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaP∕InGaAs∕GaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature.

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