Laser direct writing of tungsten from WF6

Abstract We present recent results on the development of laser direct writing of tungsten from WF 6 on silicon oxynitride (SiO x N y ), titanium nitride (TiN) and galium arsenide (GaAs). Ar + laser processing from WF 6 and H 2 on (SiO x N y ) produces low resistivity (13 μω cm) pure tungsten lines having widths as low as 2.5 μm. Deposition on GaAs using the Ar + laser occurs in a very narrow process window and is found to be irreproducible. Surface analysis suggests that a spontaneous reaction between WF 6 and GaAs, producing GaF 3 , takes place. This reaction may poison the initiation of the deposition. Finally, in order to develop a compact and inexpensive laser direct writing system, we have also investigated the use of a diode laser as the heat source. Diode laser processing from WF 6 and SiH 4 on TiN yields WSi x ( x = 0.7−0.9) lines having widths as low as 4 μm.

[1]  H. Philipp,et al.  Laser‐induced selective deposition of micron‐size structures on silicon , 1985 .

[2]  D. Rensch,et al.  High‐temperature stable W/GaAs interface and application to metal–semiconductor field‐effect transistors and digital circuits , 1987 .

[3]  D. Rathman,et al.  Comparison of laser‐initiated and thermal chemical vapor deposition of tungsten films , 1984 .

[4]  S. Kwok.  Comparison of low temperature and high temperature refractory metal/silicides self‐aligned gate on GaAs , 1986 .

[5]  C. Friend,et al.  Thermal and photoinduced decomposition of W(CO)6 on W(110) , 1991 .

[6]  Y. Suzaki,et al.  Measurement of the microm sized radius of Gaussian laser beam using the scanning knife-edge. , 1975, Applied optics.

[7]  James F. Gibbons,et al.  Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam , 1980 .

[8]  V. Stert,et al.  Laser photolytic deposition of molybdenum and tungsten thin film microstructures , 1990 .

[9]  D. Ehrlich,et al.  Supplemental multilevel interconnects by laser direct writing: Application to GaAs digital integrated circuits , 1987 .

[10]  D. Bäuerle,et al.  Kr+ laser‐induced chemical vapor deposition of W , 1987 .

[11]  K. Suguro,et al.  Tungsten/titanium nitride low‐resistance interconnections durable for high‐temperature processing , 1988 .

[12]  C. Friend,et al.  Evidence for photochemical quenching by a surface: laser induced decomposition of W(CO)6 on Si(111)-(7×7) , 1990 .

[13]  W. Sinke,et al.  Excimer laser induced deposition of tungsten on silicon , 1989 .

[14]  Z. Ying,et al.  Mechanisms of carbon and oxygen incorporation into thin metal films grown by laser photolysis of carbonyls , 1987 .

[15]  J. Steinfeld,et al.  Deposition of refractory metal films by rare‐gas halide laser photodissociation of metal carbonyls , 1986 .

[16]  S. Allen,et al.  Laser chemical vapor deposition of selected area Fe and W films , 1983 .

[17]  P. Zory.  Diode lasers lead in visible/IR performance improvement , 1991 .

[18]  M. Melloch,et al.  X‐ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces , 1989 .

[19]  A. Shintani,et al.  Excimer laser initiated chemical vapor deposition of tungsten films on silicon dioxide , 1987 .

[20]  Zhang Jie,et al.  Laser-induced thermochemical vapor deposition of tungsten films and its applications , 1991 .

[21]  A. Lecours,et al.  Laser-induced damaged formation and tungsten deposition on GaAs , 1992 .

[22]  D. Botez.  ROW laser arrays produce watts of coherent power , 1991 .

[23]  Y. Pauleau.  Chemical vapour deposition of tungsten films for metallization of integrated circuits , 1984 .