A 40-nm CMOS E-Band 4-Way Power Amplifier With Neutralized Bootstrapped Cascode Amplifier and Optimum Passive Circuits

This paper reports a fully integrated 40-nm CMOS power amplifier (PA) for E-band applications. A neutralized bootstrapped cascode amplifier (NBCA) topology is proposed to enhance the power gain and output power at millimeter wave (mm-Wave) frequencies while maintaining the stability. A broadband 4-way differential parallel-series power combiner is employed to further increase the output power. Besides, both interstage and input passive networks are optimized to improve the bandwidth and common-mode stability. Occupying 0.25 mm2, the proposed PA achieves a measured output power of 22.6 dBm with 19.3% peak power-added efficiency (PAEMAX). The 2-stage PA has a measured power gain of 25.3 dB.

[1]  Yi Zhao,et al.  A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS , 2012, IEEE Journal of Solid-State Circuits.

[2]  Patrick Reynaert,et al.  E-band transformer-based Doherty power amplifier in 40 nm CMOS , 2014, 2014 IEEE Radio Frequency Integrated Circuits Symposium.

[3]  D. Pozar.  Microwave Engineering , 1990 .

[4]  Brian Ellis.  Planar Microwave Engineering: A Practical Guide to Theory, Measurement and Circuits , 2005 .

[5]  U.R. Pfeiffer,et al.  A 23-dBm 60-GHz Distributed Active Transformer in a Silicon Process Technology , 2007, IEEE Transactions on Microwave Theory and Techniques.

[6]  J.R. Long,et al.  Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits , 2006, IEEE Journal of Solid-State Circuits.

[7]  Jonathan Wells,et al.  Multi-Gigabit Microwave and Millimeter-Wave Wireless Communications , 2010 .

[8]  P. Asbeck,et al.  A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS , 2013, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[9]  Jenshan Lin,et al.  An 83-GHz High-Gain SiGe BiCMOS Power Amplifier Using Transmission-Line Current-Combining Technique , 2013, IEEE Transactions on Microwave Theory and Techniques.

[10]  Huei Wang,et al.  A 90-GHz power amplifier with 18-dBm output power and 26 GHz 3-dB bandwidth in standard RF 65-nm CMOS technology , 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

[11]  Peter M. Asbeck,et al.  Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS , 2014, IEEE Journal of Solid-State Circuits.

[12]  Patrick Reynaert,et al.  A 60-GHz Dual-Mode Class AB Power Amplifier in 40-nm CMOS , 2013, IEEE Journal of Solid-State Circuits.

[13]  Harish Krishnaswamy,et al.  High-Power High-Efficiency Class-E-Like Stacked mmWave PAs in SOI and Bulk CMOS: Theory and Implementation , 2014, IEEE Transactions on Microwave Theory and Techniques.

[14]  Patrick Reynaert,et al.  An E-Band Power Amplifier With Broadband Parallel-Series Power Combiner in 40-nm CMOS , 2015, IEEE Transactions on Microwave Theory and Techniques.

[15]  Ali Hajimiri,et al.  Distributed active transformer-a new power-combining and impedance-transformation technique , 2002 .