Reliable PSO Based Noise Modeling Approach Applied to GaN HEMTs

In this paper a small-signal and noise modeling approach is developed and applied to GaN HEMTs. The main advantage of the proposed method is its simplicity and dependency on only pinch-off S-parameter measurements. The achieved model shows good fitting with microwave experiments performed on nonlinear solid-state devices with different sizes. The model reliability is further confirmed by the observed scaling of the extracted parameters.

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