Through pitch contact hole imaging for the 65nm node

This paper presents the details on the use of dual illumination conditions through double exposure to support the imaging of contact holes through pitch for 65nm node applications. Data generated from a 0.85 NA ArF ASML TWINSCAN(TM) system will be presented. The authors will also present simulation and process data to understand the limitations and improvements in imaging capability.

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[2]  Vincent Wiaux,et al.  Mighty high-T lithography for 65-nm generation contacts , 2003, SPIE Advanced Lithography.