论文信息 - Materials for an attenuated phase-shifting mask in 157-nm lithography

Materials for an attenuated phase-shifting mask in 157-nm lithography

We have investigated new materials for 157nm attenuated phase-shifting mask (Att-PSM). The structure of the Att-PSM is based on the bi-layer film in which a transparent film (TF) is deposited on an absorptive film (AF) on quartz substrate. We evaluated the optical property and the durability against F2 laser irradiation for 157nm Att-PSM materials, for which we prepared the modified ZrSixOy films and SiOx film as a TF and the Cr film and the modified ZrSixOy films as an AF. For a TF, the SiOx and modified ZrSixOy films achieve high transparency and robust durability against F2 laser light. For an AF, the Cr film achieves robust irradiation durability. Furthermore, we investigated the feasibility of defect inspection in consideration of the various combinations of TF and AF. From the calculation of the transmittance at inspection wavelength (193nm and 248nm), it is expected that the defect inspection is feasible in the combination of the SiOx or ZrSixOy transparent films with any absorptive film.

[1] Meguru Kashida,et al. Pellicle for F2 laser lithography , 2000, Photomask Japan.

[2] Takahiro Matsuo,et al. ZrSiO: a new and robust material for attenuated phase-shift mask in ArF lithography , 1999, Photomask Technology.

[3] Soichi Owa,et al. Dry and F-doped fused silica for photomask substrate in 157-nm lithography , 1999, Photomask Technology.

[4] Yoshiaki Ikuta,et al. New modified silica glass for 157-nm lithography , 2000, Photomask Japan.

[5] N. Fukuhara,et al. Application of zirconium silicon oxide films to an attenuated phase-shifting mask in ArF lithography , 1999, Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.

[6] Naoya Hayashi,et al. CrOxFy as a material for attenuated phase-shift masks in ArF lithography , 2000, Photomask Japan.

[7] Roger H. French,et al. Fluoropolymers for 157-nm lithography: optical properties from VUV absorbance and ellipsometry measurements , 2000, Advanced Lithography.

[8] Takayuki Kawahara,et al. New silica glass (AQF) for 157-nm lithography , 2000, Advanced Lithography.

[9] Hideki Suda,et al. Development of halftone phase-shift blank and mask fabrication for ArF lithography , 2000, Photomask Japan.