论文信息 - Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress - 字舞流文

Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

X. B. Xu | Y. Chen | Y. Huang | J. L. Wang | J. Feng | Z. He | G. Y. Li | D. Lei | Z. He | Z. He