Low Growth Temperature MOCVD InGaP for Multi-junction Solar Cells

[1]  Yoshihiro Hamakawa,et al.  Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy , 1988 .

[2]  P. C. Taylor,et al.  Excitation intensity dependence of photoluminescence in Ga0.52In0.48P , 1990 .

[3]  C. J. Chen,et al.  Effect of substrate misorientation on the optical properties and hole concentration of Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by low pressure metalorganic vapor phase epitaxy , 1992 .

[4]  H. Lakner,et al.  Analysis of ordering in GaInP by means of x‐ray diffraction , 1993 .

[5]  Naohisa Inoue,et al.  BEHAVIOR AND MECHANISM OF STEP BUNCHING DURING METALORGANIC VAPOR PHASE EPITAXY OF GAAS , 1995 .

[6]  S. Pellegrino,et al.  Ordering effects in InGaP/GaAs and InGaAsP/GaAs heterostructures grown by LP-MOVPE , 1996 .

[7]  Giso Hahn,et al.  Influence of domain size on optical properties of ordered GaInP2 , 1996 .

[8]  John F. Geisz,et al.  Passivation of Interfaces in High-Efficiency Photovoltaic Devices , 1999 .

[9]  Dominique Drouin,et al.  CASINO V2.42: a fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users. , 2007, Scanning.

[10]  John Tolle,et al.  Practical B and P doping via SixSnyGe1-x-y-zMz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior , 2009 .

[11]  Mark S. Goorsky,et al.  Influence of the degree of order of InGaP on its hardness determined using nanoindentation , 2010 .

[12]  Michael J. Aziz,et al.  Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur , 2013 .

[13]  B. Schineller,et al.  Novel approaches to MOVPE material deposition for high efficiency Multijunction Solar Cells: Novel approaches to MOVPE material deposition… , 2014 .

[14]  B. Schineller,et al.  Novel approaches to MOVPE material deposition for high efficiency Multijunction Solar Cells , 2014 .