Development of High-Voltage Vertical GaN PN Diodes
暂无分享,去创建一个
A. Allerman | M. Crawford | O. Aktas | J. Flicker | K. Hobart | A. Koehler | D. Ji | T. Anderson | R. Kaplar | M. Tadjer | S. Chowdhury | A. Armstrong | J. Dickerson | B. Gunning | A. Binder | G. Pickrell | A. Jacobs | M. Ebrish | J. Gallagher | P. Sharps | M. Porter | K. Zeng | J. Cooper | R. Martinez | L. Yates
[1] J. Cooper,et al. Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC , 2020, IEEE Electron Device Letters.
[2] T. Kimoto,et al. Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p−/n+ Junction , 2019, 2019 IEEE International Electron Devices Meeting (IEDM).
[3] D. Ji,et al. Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures , 2019, Applied Physics Letters.
[4] D. Ji,et al. On the Progress Made in GaN Vertical Device Technology , 2019, Selected Topics in Electronics and Systems.
[5] H. Amano,et al. Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown , 2019, Applied Physics Express.
[6] Roy A. Stillwell,et al. Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates , 2018, Applied Physics Letters.
[7] T. Mishima,et al. 5.0 kV breakdown-voltage vertical GaN p–n junction diodes , 2017 .
[8] F. Zutavern,et al. Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes , 2017, IEEE Transactions on Power Electronics.
[9] D. Ji,et al. A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application , 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
[10] Don Disney,et al. Reliability studies of vertical GaN devices based on bulk GaN substrates , 2015, Microelectron. Reliab..
[11] D. Bour,et al. Vertical Power p-n Diodes Based on Bulk GaN , 2015, IEEE Transactions on Electron Devices.