A numerical model for the quantitative simulation of multilayer organic light-emitting devices is presented in this article. Unlike most studies published in the literature, both electrical and optical modeling are incorporated into one. The electrical modeling is based on the drift-diffusion equations that contain charge carrier drift along with field-dependent mobility, charge carrier trapping, the heterojunction interface and the recombination process. The optical modeling utilizes the optical interference effect. The input data to the simulation include material parameters, the photoluminescence of the emitting material and the device structure. Luminance, electroluminescent spectra, Commission Internationale de l'Eclairage (CIE) chromaticity coordinates and I–V characteristics can be obtained by means of the simulation. The simulation results and experimental data are in good agreement.