Small-signal model extraction technique dedicated to noise behaviour of microwave HBTs

A complete on-wafer heterojunction bipolar transistors (HBTs) equivalent circuit parameters extraction technique is presented. It is based on the successive extraction of extrinsic and intrinsic elements. An improved method for parasitic inductance values determination is proposed. It results in a more accurate modelling of HBTs which is shown to be very useful especially for high frequency noise parameter modelling.