Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition

The structural, electrical and magnetic properties of Zn"0"."9"5Mn"0"."0"5O films grown by a pulsed laser deposition system were studied. An X-ray diffraction was tried to verify a crystal structure of the sample. A capacitance-voltage measurement showed that the Zn"0"."9"5Mn"0"."0"5O has electrical properties of an n-type semiconductor, and its carrier concentration appears 5x10^1^8cm^-^3. From a deep level transient spectroscopy measurement, an oxygen vacancy and a Mn-related electron trap in the Zn"0"."9"5Mn"0"."0"5O films were appeared as E"c-0.62eV and E"c-0.13eV, respectively. A magnetic hysteresis of ferromagnetic was measured in the Zn"0"."9"5Mn"0"."0"5O at temperature of 15K. The hydrogen plasma-annealed sample had larger magnetization than non-annealed sample because of interstitially located hydrogen atoms-mediated double exchange interaction.

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