Electrical and Optical Reliability Analysis of GeSi Electro-Absorption Modulators

Reliability analysis on Electro-Absorption Modulators reveals two degradation parts, trap generation and filling of pre-existing defects on Ge/Si and Ge/Ox interface. After stress, electro-optical extracted parameters indicate no impact of temperature, bias or stress time.

[1]  David J. Thomson,et al.  Silicon optical modulators , 2010 .

[2]  Peter De Heyn,et al.  Ultra-dense 16×56Gb/s NRZ GeSi EAM-PD arrays coupled to multicore fiber for short-reach 896Gb/s optical links , 2017, 2017 Optical Fiber Communications Conference and Exhibition (OFC).

[3]  P. Verheyen,et al.  Active Components for 50 Gb/s NRZ-OOK Optical Interconnects in a Silicon Photonics Platform , 2017, Journal of Lightwave Technology.

[4]  Joris Van Campenhout,et al.  Accelerated Device Degradation of High-Speed Ge Waveguide Photodetectors , 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

[5]  J. De Coster,et al.  Reliable 50Gb/s silicon photonics platform for next-generation data center optical interconnects , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[6]  Qi Li,et al.  Silicon Photonics for Exascale Systems , 2014, Journal of Lightwave Technology.

[7]  R. Ho,et al.  Energy-Efficient Photonics in Future High-Connectivity Computing Systems , 2015, Journal of Lightwave Technology.