论文信息 - Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor

Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor

Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.

[1] J. Fastenau,et al. Commercial production of QWIP wafers by molecular beam epitaxy , 2001 .

[2] Eric Costard,et al. QWIPs at IRnova, a status update , 2016, SPIE Defense + Security.

[3] K. Beech,et al. Broadband QWIP FPAs for hyperspectral applications , 2013 .

[4] Kwong-Kit Choi,et al. Broadband and narrow band light coupling for QWIPs , 2003 .

[5] B. F. Levine,et al. Quantum‐well infrared photodetectors , 1993 .

[6] Xavier Marcadet,et al. Quantum well infrared photodetectors: present and future , 2011 .

[7] Kwong-Kit Choi,et al. Electromagnetic modeling of QWIP FPA pixels , 2011, Defense + Commercial Sensing.

[8] Kwong-Kit Choi,et al. Detection wavelength of quantum-well infrared photodetectors , 1993 .