Influence of the effective layer thickness on the ground-state and excitonic properties of transition-metal dichalcogenide systems
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[1] Á. Rubio,et al. Dielectric screening in two-dimensional insulators: Implications for excitonic and impurity states in graphane , 2011, 1104.3346.
[2] A. Krasheninnikov,et al. Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2 from first principles , 2012 .
[3] Soon Cheol Hong,et al. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- M X 2 semiconductors ( M = Mo, W; X = S, Se, Te) , 2012 .
[4] J. Shan,et al. Tightly bound excitons in monolayer WSe(2). , 2014, Physical review letters.
[5] K. Thygesen,et al. Dielectric Genome of van der Waals Heterostructures. , 2015, Nano letters.
[6] L. Mattheiss. Band Structures of Transition-Metal-Dichalcogenide Layer Compounds. , 1973 .
[7] S. Koch,et al. Optical Response and Ground State of Graphene , 2011, 1109.0395.
[8] Wei Ruan,et al. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor. , 2014, Nature materials.
[9] R. Pandey,et al. Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films , 2015 .
[10] A. Kis,et al. Magnetoexcitons in large area CVD-grown monolayer MoS 2 and MoSe 2 on sapphire , 2016, 1602.01220.
[11] A. MacDonald,et al. Exciton band structure of monolayer MoS$_2$ , 2015, 1501.02273.
[12] Kristian Sommer Thygesen,et al. Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides , 2015, 1506.02841.
[13] Di Xiao,et al. Berry Phase Modification to the Energy Spectrum of Excitons. , 2015, Physical review letters.
[14] M. Rohlfing,et al. Interlayer excitons in a bulk van der Waals semiconductor , 2017, Nature Communications.
[15] K. Novoselov,et al. 2D materials and van der Waals heterostructures , 2016, Science.
[16] F. Guinea,et al. Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS 2 , 2013, 1304.4831.
[17] Rui Dong,et al. Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems , 2017, Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B.
[18] J. Shan,et al. Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.
[19] A. Anedda,et al. Optical spectra in WSe2 , 1979 .
[20] Wang Yao,et al. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. , 2011, Physical review letters.
[21] S. Koch,et al. Optically bright p-excitons indicating strong Coulomb coupling in transition-metal dichalcogenides , 2014, Journal of physics. Condensed matter : an Institute of Physics journal.
[22] Steven G. Louie,et al. Probing excitonic dark states in single-layer tungsten disulphide , 2014, Nature.
[23] B. Jonker,et al. Valley polarization and intervalley scattering in monolayer MoS$_{2}$ , 2012 .
[24] J. Knights,et al. Transmission spectra of some transition metal dichalcogenides. II. Group VIA: trigonal prismatic coordination , 1972 .
[25] J. Shan,et al. Tightly bound trions in monolayer MoS2. , 2012, Nature materials.
[26] G. Wang,et al. Giant enhancement of the optical second-harmonic emission of WSe(2) monolayers by laser excitation at exciton resonances. , 2015, Physical review letters.
[27] L. Golub,et al. Intrinsic exciton-state mixing and nonlinear optical properties in transition metal dichalcogenide monolayers , 2016, 1610.06780.
[28] E. Davis,et al. Electromodulation Spectroscopy of Excitons: Molybdenum Disulphide , 1973 .
[29] Wang Yao,et al. Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides , 2012, Scientific Reports.
[30] Sandip Ghosh,et al. Exciton binding energy in bulk MoS2: A reassessment , 2016 .
[31] Stephan W Koch,et al. Quantum theory of the optical and electronic properties of semiconductors, fifth edition , 2009 .
[32] Timothy C. Berkelbach,et al. Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS(2). , 2014, Physical review letters.
[33] C. Robert,et al. Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides , 2016, 1606.09554.
[34] F. Raga,et al. Excitons in molybdenum disulphide , 1975 .
[35] R. Ghosh,et al. Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor , 2013, IEEE Journal of the Electron Devices Society.
[36] Aaron M. Jones,et al. Electrical control of neutral and charged excitons in a monolayer semiconductor , 2012, Nature Communications.
[37] A. Neto,et al. Excitonic collapse in semiconducting transition-metal dichalcogenides , 2013, 1305.4278.
[38] K. Thygesen,et al. Excitons in van der Waals heterostructures: The important role of dielectric screening , 2015, 1509.07972.
[39] Timothy C. Berkelbach,et al. Theory of neutral and charged excitons in monolayer transition metal dichalcogenides , 2013, 1305.4972.
[40] Friedhelm Bechstedt,et al. Strong excitons in novel two-dimensional crystals: Silicane and germanane , 2012 .
[41] A. Anedda,et al. Exciton spectra in MoSe2 , 1980 .
[42] B. L. Evans,et al. The Band Edge Excitons in 2HMoS2 , 1976 .
[43] S. Louie,et al. Screening and many-body effects in two-dimensional crystals: Monolayer MoS 2 , 2016, 1605.08733.
[44] A. Burger,et al. Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy , 2014, Scientific Reports.
[45] Thomas Heine,et al. Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 , 2011, 1104.3670.
[46] Yong-Wei Zhang,et al. Quasiparticle band structures and optical properties of strained monolayer MoS 2 and WS 2 , 2012, 1211.5653.
[47] Xiaodong Cui,et al. Exciton Binding Energy of Monolayer WS2 , 2014, Scientific Reports.
[48] Walter R. L. Lambrecht,et al. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS 2 , 2012 .